S29GL01GS11TFB010
IC FLASH 1GBIT PARALLEL 56TSOPManufacturer: Infineon Technologies
Categories: Memory
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The Infineon Technologies S29GL01GS11TFB010 is a 1Gbit NOR Flash memory device from the GL-S series. This component features a parallel interface with an organization of 64M x 16 and a typical access time of 110 ns. Designed for demanding applications, it operates with a supply voltage range of 2.7V to 3.6V and offers a write cycle time of 60 ns per word. The device is rated for an extended operating temperature range of -40°C to 105°C and meets AEC-Q100 qualification standards, making it suitable for automotive applications. It is supplied in a 56-TSOP package, specifically a 56-TFSOP with dimensions of 18.40mm width. This non-volatile memory solution is ideal for firmware storage and code execution in various embedded systems.
Additional Information
Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 56-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 56-TSOP |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 110 ns |
| Memory Organization | 64M x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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