S29GL01GS11FHI010
IC FLASH 1GBIT PARALLEL 64FBGAManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies' S29GL01GS11FHI010, a NOR Flash memory component from the GL-S series, offers 1Gbit of non-volatile storage with a parallel interface. This device features an access time of 110 ns and a word/page write cycle time of 60 ns. Operating within a voltage range of 2.7V to 3.6V, it is designed for surface mount applications, housed in a 64-FBGA (13x11) package. The memory organization is 64M x 16, and it operates reliably within an ambient temperature range of -40°C to 85°C. This component is utilized in demanding applications across automotive, industrial, and consumer electronics sectors where high reliability and performance are critical.
Additional Information
Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-FBGA (13x11) |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 110 ns |
| Memory Organization | 64M x 16 |
| Programmable | Verified |