S29GL01GS11DHSS10
IC FLASH 1GBIT PARALLEL 64FBGAManufacturer: Infineon Technologies
Categories: Memory
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The Infineon Technologies S29GL01GS11DHSS10 is a 1Gbit NOR Flash memory component from the GL-S series. This non-volatile memory features a parallel interface with an access time of 110 ns and a write cycle time of 60 ns per word. The memory organization is 64M x 16, and it operates within a supply voltage range of 2.7V to 3.6V. Packaged in a compact 64-FBGA (9x9) surface-mount configuration, this device is suitable for demanding applications in industrial, automotive, and communication sectors. Its robust FLASH-NOR technology ensures reliable data storage and retrieval. The operating temperature range is 0°C to 85°C.
Additional Information
Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-FBGA (9x9) |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 110 ns |
| Memory Organization | 64M x 16 |
| Programmable | Not Verified |
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