S29GL01GS11DHB010
IC FLASH 1GBIT PARALLEL 64FBGAManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies S29GL01GS11DHB010 is a 1Gbit NOR Flash memory component from the GL-S series. This non-volatile memory features a parallel interface and a substantial memory organization of 64M x 16. With an access time of 110 ns and a write cycle time of 60 ns, it is designed for high-performance applications. The device operates over a voltage range of 2.7V to 3.6V and is specified for an automotive grade, meeting AEC-Q100 qualification. Its compact 64-FBGA (9x9) surface mount package makes it suitable for space-constrained designs. This component finds application in automotive, industrial, and communication systems requiring robust and reliable non-volatile storage.
Additional Information
Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-FBGA (9x9) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 110 ns |
| Memory Organization | 64M x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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