S29GL01GS11DHAV23
IC FLASH 1GBIT PARALLEL 64FBGAManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies S29GL01GS11DHAV23 is a 1Gbit NOR Flash memory component from the GL-S series. This non-volatile memory features a parallel interface with an access time of 110 ns. The memory organization is 64M x 16, and it supports a supply voltage range of 1.65V to 3.6V. Designed for surface mount applications, the component is housed in a 64-FBGA (9x9) package and supplied on tape and reel. This device is qualified to AEC-Q100 standards and operates within an ambient temperature range of -40°C to 85°C, making it suitable for demanding automotive applications. Key specifications include a word/page write cycle time of 60 ns.
Additional Information
Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-FBGA (9x9) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 110 ns |
| Memory Organization | 64M x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |