S29GL01GS10TFA023
IC FLASH 1GBIT PARALLEL 56TSOPManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies S29GL01GS10TFA023 is a 1Gbit NOR FLASH memory device from the GL-S series, featuring a parallel interface. This non-volatile memory component offers an access time of 100 ns and a word/page write cycle time of 60 ns, operating within a voltage range of 2.7V to 3.6V. The device is housed in a 56-TSOP package for surface mounting and is qualified to AEC-Q100 standards, making it suitable for automotive applications. Its memory organization is 64M x 16. The S29GL01GS10TFA023 is commonly employed in automotive systems, industrial controls, and consumer electronics requiring robust and reliable non-volatile storage.
Additional Information
Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 56-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 56-TSOP |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 100 ns |
| Memory Organization | 64M x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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