S29GL01GS10FHSS20
IC FLASH 1GBIT PARALLEL 64FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies S29GL01GS10FHSS20 is a 1Gbit NOR FLASH memory device designed for high-density non-volatile storage. This component features a parallel interface with a typical access time of 100 ns and a word/page write cycle time of 60 ns. The memory organization is 64M x 16 bits, providing efficient data management. Operating within a supply voltage range of 2.7V to 3.6V, it is suitable for applications requiring robust data retention. The S29GL01GS10FHSS20 is housed in a 64-FBGA (13x11) package and is designed for surface mounting, making it ideal for space-constrained designs. Its reliability and performance characteristics make it a suitable choice for industrial, automotive, and consumer electronics sectors.
Additional Information
Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-FBGA (13x11) |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 100 ns |
| Memory Organization | 64M x 16 |
| Programmable | Not Verified |
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