FM28V100-TG
IC FRAM 1MBIT PARALLEL 32TSOP IManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies presents the FM28V100-TG, a 1Mbit Ferroelectric RAM (F-RAM™) memory component. This non-volatile memory device features a parallel interface and a 128K x 8 organization, offering a substantial 1Mbit storage capacity. With an access time of 90 ns, it provides efficient data retrieval. The FM28V100-TG operates within a voltage range of 2V to 3.6V and supports a wide industrial operating temperature range of -40°C to 85°C. Its 32-TSOP I package is designed for surface mount applications. This component is well-suited for applications requiring high-speed, non-volatile data storage in sectors such as industrial automation, telecommunications, and consumer electronics.
Additional Information
Series: F-RAM™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 32-TFSOP (0.465"", 11.80mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2V ~ 3.6V |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Format | FRAM |
| Supplier Device Package | 32-TSOP I |
| Write Cycle Time - Word, Page | 90ns |
| Memory Interface | Parallel |
| Access Time | 90 ns |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
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