FM24V10-G
IC FRAM 1MBIT I2C 3.4MHZ 8SOICManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies F-RAM™ FM24V10-G is a 1Mbit non-volatile ferroelectric random-access memory device. This component features a 128K x 8 memory organization and operates with an I2C interface at a 3.4 MHz clock frequency. The access time is rated at 130 ns, with a write cycle time not specified. Designed for surface mount applications, it is housed in a standard 8-SOIC package. The operating voltage range is 2V to 3.6V, and it functions within an ambient temperature range of -40°C to 85°C. This FRAM technology offers high endurance and fast write speeds, making it suitable for applications in industrial automation, automotive systems, and data logging where reliable non-volatile data storage is critical.
Additional Information
Series: F-RAM™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2V ~ 3.6V |
| Technology | FRAM (Ferroelectric RAM) |
| Clock Frequency | 3.4 MHz |
| Memory Format | FRAM |
| Supplier Device Package | 8-SOIC |
| Write Cycle Time - Word, Page | - |
| Memory Interface | I2C |
| Access Time | 130 ns |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
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