FM22L16-55-TG
IC FRAM 4MBIT PARALLEL 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies F-RAM™ series FM22L16-55-TG is a 4Mbit, non-volatile Ferroelectric RAM memory integrated circuit. This parallel interface device offers an access time of 110 ns and a word/page write cycle time of 110 ns. The memory organization is 256K x 16, providing 4,194,304 bits of storage. Operating from a voltage supply of 2.7V to 3.6V, it features a wide operating temperature range of -40°C to 85°C. The component is housed in a 44-TSOP II (0.400", 10.16mm width) package, suitable for surface mount applications. This FRAM technology ensures high endurance and data retention. Applications for this component include industrial control systems, automotive electronics, and data loggers.
Additional Information
Series: F-RAM™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Format | FRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 110ns |
| Memory Interface | Parallel |
| Access Time | 110 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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