FM21LD16-60-BG
IC FRAM 2MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies' FM21LD16-60-BG is a 2Mbit Ferroelectric RAM (F-RAM™) memory integrated circuit featuring a parallel interface. This non-volatile memory device offers a memory organization of 128K x 16 and boasts an access time of 110 ns. The FM21LD16-60-BG operates within a supply voltage range of 2.7V to 3.6V and has a write cycle time of 110 ns. Packaged in a 48-FBGA (6x8) surface-mount configuration, this component is designed for reliable operation across an industrial temperature range of -40°C to 85°C. Its FRAM technology provides high endurance and fast write speeds, making it suitable for applications in industrial automation, automotive systems, and data logging.
Additional Information
Series: F-RAM™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Format | FRAM |
| Supplier Device Package | 48-FBGA (6x8) |
| Write Cycle Time - Word, Page | 110ns |
| Memory Interface | Parallel |
| Access Time | 110 ns |
| Memory Organization | 128K x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
FM25L04B-GTR
IC FRAM 4KBIT SPI 20MHZ 8SOIC
FM25L16B-GTR
IC FRAM 16KBIT SPI 20MHZ 8SOIC
FM24CL16B-G
IC FRAM 16KBIT I2C 1MHZ 8SOIC
