Infineon Technologies CYDD09S36V18-200BBXC is a 9Mbit parallel SRAM memory device. Packaged in a 256-FBGA, this component offers a 200 MHz clock speed, enabling high-performance data access. Its parallel interface facilitates rapid read and write operations, making it suitable for demanding applications where speed and bandwidth are critical. This memory solution is designed for integration into systems requiring fast volatile storage, commonly found in networking infrastructure, high-performance computing, and advanced telecommunications equipment. The CYDD09S36V18-200BBXC is supplied in tray packaging for efficient handling and integration into automated assembly processes.
Additional Information
Series:RoHS Status:Manufacturer Lead Time:Product Status: ActivePackaging: Tray