CY7S1061GE30-10BVM
IC SRAM 16MBIT PARALLEL 48VFBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY7S1061GE30-10BVM is a 16Mbit synchronous, SDR SRAM memory component. This device features a parallel memory interface with an organization of 1M x 16 bits. The access time for this component is 10 ns, with a word/page write cycle time also rated at 10 ns. It operates within a supply voltage range of 2.2V to 3.6V and is designed for surface mounting in a 48-VFBGA (6x8) package. The CY7S1061GE30-10BVM is suitable for operation across an extended temperature range of -55°C to 125°C. This memory solution finds application in various industries, including telecommunications, industrial automation, and embedded systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Volatile |
| Operating Temperature | -55°C ~ 125°C (TA) |
| Voltage - Supply | 2.2V ~ 3.6V |
| Technology | SRAM - Synchronous, SDR |
| Memory Format | SRAM |
| Supplier Device Package | 48-VFBGA (6x8) |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 1M x 16 |
| Programmable | Not Verified |
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