CY7C1911UV18-300BZC
IC SRAM 18MBIT PARALLEL 165FBGAManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies CY7C1911UV18-300BZC is an 18Mbit synchronous SRAM memory device featuring a QDR II parallel interface. This component operates at a clock frequency of 300 MHz and offers a memory organization of 2M x 9. Designed for surface mount applications, it is housed in a 165-FBGA (13x15) package. The operating voltage range is 1.7V to 1.9V, with an ambient temperature range of 0°C to 70°C. This high-speed memory solution is suitable for demanding applications in networking, telecommunications, and high-performance computing.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | 165-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 18Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SRAM - Synchronous, QDR II |
| Clock Frequency | 300 MHz |
| Memory Format | SRAM |
| Supplier Device Package | 165-FBGA (13x15) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 2M x 9 |
| Programmable | Not Verified |
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