CY7C1321KV18-333BZC
IC SRAM 18MBIT PARALLEL 165FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY7C1321KV18-333BZC is an 18Mbit synchronous SRAM device featuring a parallel interface. This high-speed memory operates at 333 MHz with a voltage supply range of 1.7V to 1.9V. The memory organization is 512K words by 36 bits, utilizing DDR II technology for enhanced performance. Packaged in a 165-FBGA (13x15) for surface mounting, this component is suitable for demanding applications in sectors such as networking, telecommunications, and high-performance computing. Its robust design and precise timing characteristics make it a reliable choice for complex system architectures.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 165-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 18Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SRAM - Synchronous, DDR II |
| Clock Frequency | 333 MHz |
| Memory Format | SRAM |
| Supplier Device Package | 165-FBGA (13x15) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 512K x 36 |
| Programmable | Not Verified |
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