CY7C1318KV18-250BZI
IC SRAM 18MBIT PARALLEL 165FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY7C1318KV18-250BZI is a high-performance 18Mbit synchronous SRAM device. This memory component features a DDR II interface, enabling efficient data transfer at a clock frequency of 250 MHz. Organized as 1M x 18 bits, it offers a parallel interface for memory access. The CY7C1318KV18-250BZI is designed for demanding applications requiring fast volatile memory, including networking infrastructure, high-speed computing, and advanced telecommunications systems. It operates within a voltage range of 1.7V to 1.9V and is housed in a compact 165-FBGA (13x15) package, suitable for surface-mount assembly. The device operates across an industrial temperature range of -40°C to 85°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: Product Status: Last Time BuyPackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 165-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 18Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SRAM - Synchronous, DDR II |
| Clock Frequency | 250 MHz |
| Memory Format | SRAM |
| Supplier Device Package | 165-FBGA (13x15) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 1M x 18 |
| Programmable | Not Verified |
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