Infineon Technologies CY7C1318CV18-200BZXC is a high-speed, asynchronous Static Random Access Memory (SRAM) device offering 18 Megabits of storage in a parallel interface. This component operates at 200 MHz with a low voltage supply, making it suitable for demanding applications requiring rapid data access. The 165-pin FBGA package ensures excellent signal integrity and board-level integration. Its architecture is optimized for performance in high-throughput systems. The CY7C1318CV18-200BZXC finds application in areas such as networking infrastructure, data storage, and high-performance computing. This memory solution is designed for robust operation and efficient power management.
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Series:RoHS Status:Manufacturer Lead Time:Product Status: ActivePackaging: Tray