CY7C1314BV18-250BZXC
IC SRAM 18MBIT PAR 165FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies' CY7C1314BV18-250BZXC is a high-performance 18Mbit Synchronous SRAM, specifically implementing the QDR II memory architecture. This component offers a 250 MHz clock frequency, facilitating rapid data access for demanding applications. The memory is organized as 512K x 36, providing ample data width for efficient parallel processing. Designed for surface mount integration, it utilizes a compact 165-FBGA (13x15) package and operates within a supply voltage range of 1.7V to 1.9V. The CY7C1314BV18-250BZXC is suitable for use in telecommunications, networking equipment, and high-speed computing systems where low latency and high bandwidth are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 165-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 18Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SRAM - Synchronous, QDR II |
| Clock Frequency | 250 MHz |
| Memory Format | SRAM |
| Supplier Device Package | 165-FBGA (13x15) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 512K x 36 |
| Programmable | Not Verified |
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