CY7C1312LV18-250BZXC
IC SRAM 18MBIT PAR 165FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY7C1312LV18-250BZXC is a high-performance, 18Mbit synchronous SRAM memory device organized as 1M x 18. Featuring a QDR II interface, this component operates at a 250 MHz clock frequency, enabling rapid data throughput. The CY7C1312LV18-250BZXC is designed for demanding applications requiring fast, parallel memory access. Its 1.7V to 1.9V operating voltage range and 165-FBGA (13x15) surface-mount package make it suitable for integration into compact, power-sensitive systems. This memory solution finds utility in networking infrastructure, high-speed computing, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 165-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 18Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SRAM - Synchronous, QDR II |
| Clock Frequency | 250 MHz |
| Memory Format | SRAM |
| Supplier Device Package | 165-FBGA (13x15) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 1M x 18 |
| Programmable | Not Verified |
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