CY7C1312KV18-300BZXCT
IC SRAM 18MBIT PARALLEL 165FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY7C1312KV18-300BZXCT is a high-speed, 18Mbit synchronous SRAM device featuring a QDR II interface. This component is organized as 1M x 18 bits and operates at a clock frequency of 300 MHz, providing robust performance for demanding applications. Designed for surface mounting, it utilizes a 165-FBGA (13x15) package. The CY7C1312KV18-300BZXCT operates within a voltage range of 1.7V to 1.9V and has an operating temperature range of 0°C to 70°C. This memory solution is typically employed in high-performance networking equipment, telecommunications infrastructure, and advanced computing systems where rapid data access is critical. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 165-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 18Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 1.7V ~ 1.9V |
| Technology | SRAM - Synchronous, QDR II |
| Clock Frequency | 300 MHz |
| Memory Format | SRAM |
| Supplier Device Package | 165-FBGA (13x15) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | 1M x 18 |
| Programmable | Not Verified |
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