Home

Products

Integrated Circuits (ICs)

Memory

Memory

CY7C1312KV18-250BZXC

Banner
productimage

CY7C1312KV18-250BZXC

IC SRAM 18MBIT PAR 165FBGA

Manufacturer: Infineon Technologies

Categories: Memory

Quality Control: Learn More

Infineon Technologies CY7C1312KV18-250BZXC is a 18Mbit synchronous SRAM, QDR II memory component. This device offers a parallel interface with a clock frequency of 250 MHz and a memory organization of 1M x 18. Operating within a voltage range of 1.7V to 1.9V, it features a surface mount, 165-FBGA (13x15) package. The CY7C1312KV18-250BZXC is suitable for applications requiring high-speed data buffering and access, commonly found in networking equipment, telecommunications infrastructure, and high-performance computing systems. Its volatile memory type and operating temperature range of 0°C to 70°C (TA) are critical considerations for system design.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case165-LBGA
Mounting TypeSurface Mount
Memory Size18Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply1.7V ~ 1.9V
TechnologySRAM - Synchronous, QDR II
Clock Frequency250 MHz
Memory FormatSRAM
Supplier Device Package165-FBGA (13x15)
Write Cycle Time - Word, Page-
Memory InterfaceParallel
Memory Organization1M x 18
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
S25FL256SDSMFA000

IC FLASH 256MBIT SPI/QUAD 16SOIC

product image
CG9199AM

IC MEMORY

product image
S27KL0643GABHV020

IC PSRAM 64MBIT SPI/OCTAL 24FBGA