CY7C106D-10VXI
IC SRAM 1MBIT PARALLEL 28SOJManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY7C106D-10VXI, an asynchronous SRAM memory IC, offers a 1Mbit capacity organized as 256K x 4. This component features a parallel memory interface with a rapid 10 ns access time and a 10 ns word/page write cycle time. Operating within a voltage range of 4.5V to 5.5V, it is housed in a 28-SOJ (0.400" width) surface-mount package suitable for industrial and commercial applications. The CY7C106D-10VXI is designed for operation across a temperature range of -40°C to 85°C. This memory solution is commonly utilized in areas such as industrial automation, consumer electronics, and telecommunications equipment requiring fast, reliable data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 28-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 28-SOJ |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 4 |
| Programmable | Not Verified |
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