CY7C10612GN30-10ZSXI
IC SRAM 16MBIT PAR 54TSOP IIManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies CY7C10612GN30-10ZSXI is a 16Mbit asynchronous SRAM with a parallel interface. This memory component offers a fast 10 ns access time and a word write cycle time of 10 ns, facilitating high-speed data operations. The memory organization is 1M x 16, providing ample capacity for data storage. Designed for surface mount applications, it is housed in a 54-TSOP II package with a 0.400" width. The device operates over a wide temperature range of -40°C to 85°C and requires a supply voltage between 2.2V and 3.6V. This SRAM is suitable for demanding applications across various industries, including industrial automation, telecommunications, and consumer electronics where reliable and fast volatile memory is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 54-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.2V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 54-TSOP II |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 1M x 16 |
| Programmable | Not Verified |
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