CY7C1041GE30-10VXI
IC SRAM 4MBIT PARALLEL 44SOJManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY7C1041GE30-10VXI is a 4Mbit asynchronous Static Random Access Memory (SRAM) device. Featuring a parallel interface, this memory IC offers an access time of 10 ns and a write cycle time of 10 ns. The memory organization is 256K x 16, providing a total storage capacity of 4 megabits. Designed for surface mount applications, the CY7C1041GE30-10VXI is packaged in a 44-SOJ (44-BSOJ) format. It operates within a supply voltage range of 2.2V to 3.6V and functions across an industrial temperature range of -40°C to 85°C. This component is utilized in various industrial applications requiring high-speed data storage and retrieval.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 44-BSOJ (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.2V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-SOJ |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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