CY7C1011G30-10ZSXAT
IC SRAM 2MBIT PARALLEL 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies CY7C1011G30-10ZSXAT is a 2Mbit asynchronous SRAM memory component with a parallel interface. This device offers a fast 10 ns access time and a memory organization of 128K x 16. Designed for surface mount applications, it is supplied in a 44-TSOP II package. The operating voltage range is 2.2V to 3.6V, with a word/page write cycle time of 10 ns. This volatile memory is suitable for a wide range of applications, including industrial automation, consumer electronics, and telecommunications. The component is provided on a tape and reel for efficient manufacturing processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.2V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 10ns |
| Memory Interface | Parallel |
| Access Time | 10 ns |
| Memory Organization | 128K x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
S25FL128SDSMFA003
IC FLASH 128MBIT SPI/QUAD 16SOIC
CG8830AMT
IC MEMORY
CY7C1305TV25-167BZXC
IC SRAM 18MBIT PAR 165FBGA
