CY62167GN18-55BVXI
IC SRAM 16MBIT PARALLEL 48VFBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies MoBL® CY62167GN18-55BVXI is a 16Mbit asynchronous SRAM memory IC. Featuring a parallel interface, this component offers a memory organization of 2M x 8 or 1M x 16, with an access time of 55 ns. The CY62167GN18-55BVXI operates within a supply voltage range of 1.65V to 2.2V and has a write cycle time of 55ns. Packaged in a 48-VFBGA (6x8) surface-mount configuration, it is designed for operation across an industrial temperature range of -40°C to 85°C. This high-density, low-voltage SRAM is suitable for applications in industrial automation, consumer electronics, and communication systems.
Additional Information
Series: MoBL®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2.2V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-VFBGA (6x8) |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 2M x 8, 1M x 16 |
| Programmable | Not Verified |
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