CY62157H30-55ZSXE
IC SRAM 8MBIT PARManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies MoBL® series asynchronous SRAM, part number CY62157H30-55ZSXE, offers 8Mbit of parallel memory capacity. This component features a 55 ns access time and a memory organization of 512K x 16. Designed for high-speed operation, it supports a supply voltage range of 2.2V to 3.6V. The write cycle time for a word or page is also rated at 55 ns.
This volatile memory IC is housed in a 48-TSOP I package, suitable for surface mount applications. It operates reliably across an industrial temperature range of -40°C to 125°C. The CY62157H30-55ZSXE finds application in various demanding sectors including automotive, industrial automation, and telecommunications equipment where fast, reliable data storage is critical. The package type is 48-TFSOP with a width of 18.40mm.
Additional Information
Series: MoBL®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 2.2V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-TSOP I |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 512K x 16 |
Request a Quote
Clients Also Buy
CY62147EV18LL-55BVXI
IC SRAM 4MBIT PARALLEL 48VFBGA
CY62146EV30LL-45BVXI
IC SRAM 4MBIT PARALLEL 48VFBGA
CY62148ELL-55SXIT
IC SRAM 4MBIT PARALLEL 32SOIC
