CY62157G18-55BVXI
IC SRAM 8MBIT PARALLEL 48VFBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies MoBL® series CY62157G18-55BVXI is an 8Mbit asynchronous SRAM with a parallel interface. This memory component offers a 55 ns access time and a word write cycle time of 55 ns, facilitating rapid data operations. The memory is organized as 512K x 16 bits, providing ample capacity for diverse applications. Operating within a voltage range of 2.2V to 3.6V, it supports a wide temperature range from -40°C to 85°C. The CY62157G18-55BVXI is housed in a compact 48-VFBGA (6x8) package, suitable for surface mount applications. This component finds utility in industrial automation, telecommunications, and consumer electronics sectors where reliable, high-speed volatile memory is critical.
Additional Information
Series: MoBL®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.2V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-VFBGA (6x8) |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 512K x 16 |
| Programmable | Not Verified |
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