CY62147GE18-55ZSXIT
IC SRAM 4MBIT PARALLEL 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies MoBL® series CY62147GE18-55ZSXIT is a 4Mbit asynchronous SRAM memory component. This high-performance IC features a parallel interface and a memory organization of 256K x 16, providing a byte-wide data path. With an access time of 55 ns and a write cycle time of 55 ns, it is suitable for applications demanding rapid data retrieval and manipulation. The component operates over a supply voltage range of 1.65V to 2.2V and functions within an ambient temperature range of -40°C to 85°C. Packaged in a 44-TSOP II (0.400" width) and supplied on tape and reel, the CY62147GE18-55ZSXIT is designed for surface mount applications. This memory solution finds utility in various industrial sectors including industrial automation, communications infrastructure, and consumer electronics where fast, volatile data storage is critical.
Additional Information
Series: MoBL®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2.2V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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