CY62147GE18-55ZSXI
IC SRAM 4MBIT PARALLEL 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies MoBL® CY62147GE18-55ZSXI is a 4Mbit asynchronous SRAM with a parallel interface. This memory component offers a fast access time of 55 ns and a write cycle time of 55 ns. The memory organization is 256K x 16, providing 4,194,304 bits of storage. Designed for surface mounting, it utilizes a 44-TSOP II package with a 0.400" width. Operating from a supply voltage range of 1.65V to 2.2V, this volatile memory is suitable for applications requiring high-speed data storage and retrieval. The device operates within an ambient temperature range of -40°C to 85°C. This component finds application in various industries, including industrial automation and consumer electronics.
Additional Information
Series: MoBL®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2.2V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 44-TSOP II |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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