CY62147GE18-55BVXIT
IC SRAM 4MBIT PARALLEL 48VFBGAManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
The Infineon Technologies CY62147GE18-55BVXIT is a 4Mbit asynchronous SRAM organized as 256K x 16. Featuring a 55 ns access time and write cycle time, this memory component operates with a supply voltage range of 1.65V to 2.2V. It is housed in a compact 48-VFBGA (6x8) package and supports surface mount installation. Engineered for efficient operation, the MoBL® series SRAM is suitable for applications requiring fast data access in power-sensitive environments. This component finds utility in various industrial sectors, including telecommunications and consumer electronics, where reliable, high-speed volatile memory is critical. The CY62147GE18-55BVXIT is supplied on tape and reel for automated assembly.
Additional Information
Series: MoBL®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2.2V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-VFBGA (6x8) |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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