CY62147GE18-55BVXI
IC SRAM 4MBIT PARALLEL 48VFBGAManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies CY62147GE18-55BVXI is a 4Mbit asynchronous SRAM from the MoBL® series. This volatile memory component features a parallel interface with a memory organization of 256K x 16. The CY62147GE18-55BVXI offers a maximum access time of 55 ns, with a corresponding write cycle time of 55ns. It operates within a voltage range of 1.65V to 2.2V and is packaged in a 48-VFBGA (6x8) surface mount configuration. The operating temperature range is specified as -40°C to 85°C (TA). This component is suitable for applications in industrial and consumer electronics.
Additional Information
Series: MoBL®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 2.2V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-VFBGA (6x8) |
| Write Cycle Time - Word, Page | 55ns |
| Memory Interface | Parallel |
| Access Time | 55 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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