CY62147EV30LL-45BVI
IC SRAM 4MBIT PARALLEL 48VFBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies MoBL® series CY62147EV30LL-45BVI is a 4Mbit asynchronous SRAM device organized as 256K x 16. This high-density memory features a parallel interface with an access time of 45 ns and a write cycle time of 45 ns. Operating over a voltage range of 2.2V to 3.6V, it is suitable for applications requiring robust data retention and fast read/write operations. The device is housed in a compact 48-VFBGA (6x8) package, designed for surface mounting and operating within an industrial temperature range of -40°C to 85°C. This Infineon Technologies memory component is commonly utilized in various industrial automation, communication systems, and consumer electronics where reliable volatile memory is critical.
Additional Information
Series: MoBL®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 48-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.2V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-VFBGA (6x8) |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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