CY62147EV30LL-45B2XI
IC SRAM 4MBIT PARALLEL 48VFBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies MoBL® series SRAM, part number CY62147EV30LL-45B2XI, offers a 4Mbit asynchronous parallel memory solution. This component features a fast access time of 45 ns and a word/page write cycle time of 45 ns, making it suitable for demanding applications. The memory organization is 256K x 16, providing ample capacity for data buffering and storage. Operating within a voltage range of 2.2V to 3.6V, it is designed for efficient power consumption. The CY62147EV30LL-45B2XI is housed in a compact 48-VFBGA (6x8) surface-mount package, ideal for space-constrained designs. Its operating temperature range of -40°C to 85°C ensures reliability in various environmental conditions. Applications for this volatile memory include industrial automation, consumer electronics, and telecommunications.
Additional Information
Series: MoBL®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.2V ~ 3.6V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 48-VFBGA (6x8) |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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