Home

Products

Integrated Circuits (ICs)

Memory

Memory

CY62136FV30LL-55ZSXET

Banner
productimage

CY62136FV30LL-55ZSXET

IC SRAM 2MBIT PARALLEL 44TSOP II

Manufacturer: Infineon Technologies

Categories: Memory

Quality Control: Learn More

Infineon Technologies MoBL® CY62136FV30LL-55ZSXET is a 2Mbit asynchronous SRAM organized as 128K x 16. This memory component features a parallel interface with a fast access time of 55 ns and a write cycle time of 55 ns. Designed for surface mount applications, it is housed in a 44-TSOP II package. The operating voltage range is 2V to 3.6V, with an extended operating temperature range of -40°C to 125°C. This device is suitable for use in industrial, automotive, and consumer electronics applications requiring high-speed, non-volatile data storage. The component is supplied on a tape and reel for efficient manufacturing processes.

Additional Information

Series: MoBL®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case44-TSOP (0.400"", 10.16mm Width)
Mounting TypeSurface Mount
Memory Size2Mbit
Memory TypeVolatile
Operating Temperature-40°C ~ 125°C (TA)
Voltage - Supply2V ~ 3.6V
TechnologySRAM - Asynchronous
Memory FormatSRAM
Supplier Device Package44-TSOP II
Write Cycle Time - Word, Page55ns
Memory InterfaceParallel
Access Time55 ns
Memory Organization128K x 16
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
CY62147EV18LL-55BVXI

IC SRAM 4MBIT PARALLEL 48VFBGA

product image
CY62146EV30LL-45BVXI

IC SRAM 4MBIT PARALLEL 48VFBGA

product image
CY62148ELL-55SXIT

IC SRAM 4MBIT PARALLEL 32SOIC