CY15B102N-ZS60XM
IC FRAM 2MBIT PARALLEL 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies CY15B102N-ZS60XM is a 2Mbit F-RAM™ memory IC featuring a parallel interface. This non-volatile memory offers a fast 90 ns access time and a write cycle time of 90 ns, making it suitable for high-speed data logging and state saving applications. The memory organization is 128K x 16, and it operates from a 2V to 3.6V supply. Packaged in a 44-TSOP II (0.400" width) for surface mounting, this component is qualified to AEC-Q100 standards and operates across an industrial temperature range of -40°C to 85°C. Its ferroelectric RAM technology provides excellent endurance and data retention. This device is commonly integrated into automotive systems, industrial control, and data acquisition equipment requiring reliable, fast write capabilities.
Additional Information
Series: F-RAM™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2V ~ 3.6V |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Format | FRAM |
| Supplier Device Package | 44-TSOP II |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 90ns |
| Memory Interface | Parallel |
| Access Time | 90 ns |
| Memory Organization | 128K x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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