CY15B102N-ZS60XET
IC FRAM 2MBIT PARALLEL 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies CY15B102N-ZS60XET is a 2Mbit parallel Ferroelectric RAM (F-RAM) memory IC. This non-volatile memory component offers a fast access time of 90 ns and a word/page write cycle time of 90 ns. The memory organization is 128K x 16, accessed via a parallel interface. The CY15B102N-ZS60XET is designed for surface-mount applications and comes in a 44-TSOP II package (400 mil width). Operating over a voltage supply range of 2V to 3.6V, this device is qualified to AEC-Q100 and suitable for automotive applications, with an operating temperature range of -40°C to 125°C. The F-RAM technology provides high endurance and low power consumption, making it ideal for data logging, automotive control units, and industrial automation systems.
Additional Information
Series: F-RAM™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 2V ~ 3.6V |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Format | FRAM |
| Supplier Device Package | 44-TSOP II |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 90ns |
| Memory Interface | Parallel |
| Access Time | 90 ns |
| Memory Organization | 128K x 16 |
| Qualification | AEC-Q100 |
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