CY15B102N-ZS60XE
IC FRAM 2MBIT PARALLEL 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY15B102N-ZS60XE is a 2Mbit parallel Ferroelectric RAM (F-RAM™) memory integrated circuit. This non-volatile memory features a 128K x 16 organization and offers a fast access time of 90 ns, with a word/page write cycle time also at 90 ns. Designed for demanding applications, it operates across a wide supply voltage range of 2V to 3.6V. The CY15B102N-ZS60XE is housed in a 44-TSOP II package, suitable for surface mount configurations. Its automotive grade qualification (AEC-Q100) and operating temperature range of -40°C to 125°C make it ideal for use in automotive electronics, industrial control systems, and advanced consumer devices where high reliability and endurance are critical.
Additional Information
Series: F-RAM™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 2V ~ 3.6V |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Format | FRAM |
| Supplier Device Package | 44-TSOP II |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 90ns |
| Memory Interface | Parallel |
| Access Time | 90 ns |
| Memory Organization | 128K x 16 |
| Qualification | AEC-Q100 |