CY15B101N-ZS60XM
IC FRAM 1MBIT PARALLEL 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies CY15B101N-ZS60XM is a 1Mbit F-RAM™ memory integrated circuit featuring a parallel interface. This non-volatile memory offers a 64K x 16 organization and boasts a rapid 90 ns access time. Designed for demanding applications, it operates across a wide temperature range of -55°C to 125°C and supports a supply voltage from 2V to 3.6V. The CY15B101N-ZS60XM is housed in a 44-TSOP II package, suitable for surface mounting. Its Ferroelectric RAM technology ensures high endurance and low power consumption, making it ideal for automotive and industrial control systems. This component meets AEC-Q100 qualification standards.
Additional Information
Series: F-RAM™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -55°C ~ 125°C (TA) |
| Voltage - Supply | 2V ~ 3.6V |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Format | FRAM |
| Supplier Device Package | 44-TSOP II |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 90ns |
| Memory Interface | Parallel |
| Access Time | 90 ns |
| Memory Organization | 64K x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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