CY15B101N-ZS60XET
IC FRAM 1MBIT PARALLEL 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies CY15B101N-ZS60XET is a 1Mbit Ferroelectric RAM (F-RAM) memory integrated circuit. This non-volatile memory features a parallel interface with a fast access time of 90 ns and a word/page write cycle time of 90 ns. The memory organization is 64K x 16. Operating within a supply voltage range of 2V to 3.6V, this component is qualified to AEC-Q100 and designed for automotive applications, operating across a wide temperature range of -40°C to 125°C. The CY15B101N-ZS60XET is supplied in a 44-TSOP II package suitable for surface mounting and is provided on tape and reel. Its robust ferroelectric technology makes it suitable for demanding applications in automotive and industrial sectors where data integrity and fast write speeds are critical.
Additional Information
Series: F-RAM™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 2V ~ 3.6V |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Format | FRAM |
| Supplier Device Package | 44-TSOP II |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 90ns |
| Memory Interface | Parallel |
| Access Time | 90 ns |
| Memory Organization | 64K x 16 |
| Qualification | AEC-Q100 |
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