CY15B101N-ZS60XE
IC FRAM 1MBIT PARALLEL 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies CY15B101N-ZS60XE is a 1Mbit parallel F-RAM™ memory IC. This non-volatile memory features a rapid 90 ns access time and a 90 ns write cycle time, organized as 64K x 16. Designed for demanding applications, it operates across a 2V to 3.6V supply voltage range and is qualified to AEC-Q100 standards, indicating its suitability for automotive environments. The device is housed in a 44-TSOP II package, facilitating surface mount integration. Its ferroelectric RAM technology offers high endurance and low power consumption, making it ideal for applications requiring frequent data writes. This component finds utility in automotive control systems, industrial automation, and consumer electronics where reliable, fast non-volatile data storage is critical.
Additional Information
Series: F-RAM™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 2V ~ 3.6V |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Format | FRAM |
| Supplier Device Package | 44-TSOP II |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 90ns |
| Memory Interface | Parallel |
| Access Time | 90 ns |
| Memory Organization | 64K x 16 |
| Qualification | AEC-Q100 |
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