CY15B101N-ZS60XAT
IC FRAM 1MBIT PARALLEL 44TSOP IIManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies CY15B101N-ZS60XAT is a 1Mbit F-RAM™ memory IC featuring a parallel interface. This non-volatile memory offers a fast 90 ns access time and write cycle time, organized as 64K x 16. Designed for demanding applications, it operates across a wide voltage range of 2V to 3.6V and is qualified to AEC-Q100, making it suitable for the automotive industry. The memory is housed in a 44-TSOP II package, designed for surface mounting. This component is ideal for applications requiring high-speed, non-volatile data storage where data retention and endurance are critical.
Additional Information
Series: F-RAM™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2V ~ 3.6V |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Format | FRAM |
| Supplier Device Package | 44-TSOP II |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 90ns |
| Memory Interface | Parallel |
| Access Time | 90 ns |
| Memory Organization | 64K x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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