CY14V116N-BZ30XIT
IC NVSRAM 16MBIT PAR 165FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14V116N-BZ30XIT is a 16Mbit NVSRAM memory device with a parallel interface. This component offers a fast 30 ns access time and a write cycle time of 30 ns. The memory organization is 1M x 16, providing a robust solution for data retention in volatile memory. Operating within a voltage range of 1.7V to 3.6V, it is designed for surface mount applications and comes in a 165-FBGA (15x17) package. The operating temperature range is -40°C to 85°C. This NVSRAM is suitable for applications requiring instant write to non-volatile memory without the overhead of traditional EEPROM writes, commonly found in industrial automation, telecommunications, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 165-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 165-FBGA (15x17) |
| Write Cycle Time - Word, Page | 30ns |
| Memory Interface | Parallel |
| Access Time | 30 ns |
| Memory Organization | 1M x 16 |
| Programmable | Not Verified |
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