CY14V116N-BZ30XI
IC NVSRAM 16MBIT PAR 165FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14V116N-BZ30XI is a 16Mbit Non-Volatile SRAM device with a parallel interface. This component offers a 30ns access time and a 30ns write cycle time, ensuring high-speed data operations. The memory is organized as 1M x 16 bits, providing ample capacity for data storage. Operating within a voltage range of 1.7V to 3.6V, it is suitable for power-sensitive applications. The CY14V116N-BZ30XI features a 165-FBGA (15x17) package, designed for surface mounting and operating across an industrial temperature range of -40°C to 85°C. This NVSRAM technology combines the speed of SRAM with the non-volatility of EEPROM, making it ideal for applications requiring instant data recall upon power restoration. This component is commonly found in industrial automation, telecommunications infrastructure, and embedded systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 165-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 165-FBGA (15x17) |
| Write Cycle Time - Word, Page | 30ns |
| Memory Interface | Parallel |
| Access Time | 30 ns |
| Memory Organization | 1M x 16 |
| Programmable | Not Verified |
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