CY14V116G7-BZ30XI
IC NVSRAM 16MBIT PAR 165FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14V116G7-BZ30XI is a 16Mbit Non-Volatile Static Random-Access Memory (NVSRAM) device. This component features a parallel interface, organized as 2M x 8 or 1M x 16, enabling high-speed data access with a word/page write cycle time of 30ns. Operating from a supply voltage range of 1.7V to 3.6V, it is designed for surface mounting within a compact 165-FBGA (15x17) package. The operating temperature range is specified as -40°C to 85°C. This NVSRAM is suitable for applications requiring persistent data storage with the performance characteristics of SRAM, commonly found in industrial control systems, automotive electronics, and telecommunications infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 165-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 165-FBGA (15x17) |
| Write Cycle Time - Word, Page | 30ns |
| Memory Interface | Parallel |
| Memory Organization | 2M x 8, 1M x 16 |
| Programmable | Not Verified |
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