CY14V104NA-BA25XIT
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14V104NA-BA25XIT is a 4Mbit Non-Volatile SRAM (NVSRAM) memory component. Featuring a parallel interface, this device offers a fast access time of 25 ns and a write cycle time of 25 ns. The memory organization is 256K x 16, and it operates within a supply voltage range of 2.7V to 3.6V. The NVSRAM technology ensures data retention without power. This component is housed in a 48-FBGA (6x10) package, suitable for surface mount applications. The operating temperature range is -40°C to 85°C. It is supplied in tape and reel packaging. This part finds application in industrial, automotive, and communication systems requiring reliable data storage and fast read/write operations.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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