CY14V104NA-BA25XI
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies' CY14V104NA-BA25XI is a 4Mbit Non-Volatile SRAM component featuring a parallel interface. This memory device offers a fast access time of 25 ns and a write cycle time of 25 ns. The memory organization is 256K x 16, providing a substantial density for data storage. Operating over a supply voltage range of 2.7V to 3.6V, it maintains reliable performance within an industrial temperature range of -40°C to 85°C. The component is housed in a compact 48-FBGA (6x10) package, suitable for surface mount applications. This NVSRAM technology combines the speed of SRAM with the data retention of non-volatile memory, making it ideal for applications requiring instant data availability and persistent storage, such as industrial control systems, automotive electronics, and data logging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
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