CY14V104LA-BA45XI
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies CY14V104LA-BA45XI is a 4Mbit Non-Volatile Static Random-Access Memory (NVSRAM) organized as 512K x 8. This device features a parallel interface with an access time of 45 ns and a write cycle time of 45 ns. Operating from a supply voltage range of 2.7V to 3.6V, it maintains data integrity during power loss without the need for external batteries. The component is housed in a compact 48-FBGA (6x10) package, suitable for surface mounting. Its robust operation is guaranteed across an industrial temperature range of -40°C to 85°C. This NVSRAM is designed for applications requiring high-speed data capture and non-volatile storage, commonly found in industrial automation, data logging, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |