CY14V104LA-BA25XIT
IC NVSRAM 4MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14V104LA-BA25XIT is a 4Mbit Non-Volatile SRAM (NVSRAM) memory device featuring a parallel interface. This component offers a fast 25 ns access time, crucial for applications demanding rapid data retrieval and storage. The memory organization is 512K x 8, providing efficient data handling capabilities. Designed for surface mount applications, it utilizes a 48-FBGA (6x10) package, suitable for compact board designs. Operating within a voltage range of 2.7V to 3.6V and an ambient temperature range of -40°C to 85°C, this NVSRAM is engineered for reliability in demanding environments. Its non-volatile nature ensures data retention even during power loss, making it ideal for data logging, configuration storage, and critical system state saving in industrial automation, telecommunications, and embedded systems. The write cycle time for a word or page is also 25ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 512K x 8 |
| Programmable | Not Verified |
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