CY14V101NA-BA45XI
IC NVSRAM 1MBIT PARALLEL 48FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies CY14V101NA-BA45XI is a 1Mbit Non-Volatile SRAM (NVSRAM) memory device featuring a parallel interface. It offers a fast access time of 45 ns and a word write cycle time of 45 ns, ensuring efficient data handling. The memory organization is 64K x 16, providing 1,048,576 bits of storage. This surface-mount component is housed in a compact 48-FBGA (6x10) package. Operating within a voltage range of 2.7V to 3.6V, it is suitable for applications requiring data retention during power loss, such as industrial control systems, data logging, and embedded systems in the automotive sector. The device operates reliably across a temperature range of -40°C to 85°C (TA).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 48-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 48-FBGA (6x10) |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 64K x 16 |
| Programmable | Not Verified |
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